* SCT3022AL * SiC NMOSFET model * 650V 93A 22mOhm * Model Generated by ROHM * All Rights Reserved * Commercial Use or Resale Restricted * Date: 2017/03/03 ******************D G S .SUBCKT SCT3022AL 1 2 3 .PARAM T0=25 .FUNC R1(I) {15.89m*I*EXP((TEMP-T0)/255.5)+1.274u*I*ABS(I)**1.575*EXP((TEMP-T0)/-2495)} .FUNC R2(I) {I*(1.0*(1+TANH(I))/2+6.6*(1-TANH(I))/2)} .FUNC V1(V,W) {V-738.2m*ASINH(W/5.716)*EXP((TEMP-T0)/-1443)- + 204.0m*ASINH(W/0.1115)*EXP((TEMP-T0)/-312.9)-13.55m*W*EXP((TEMP-T0)/378.6)} .FUNC V2(V) {421.3f*V**(16.59*EXP((TEMP-T0)/-5120))*EXP((TEMP-T0)/26.92*EXP((TEMP-T0)/-1531))} .FUNC V3(V) {225.3*SINH(V/225.3)*EXP((TEMP-T0)/12585)} .FUNC I1(V,W) {V3(V)*(1+2.078*(TANH((V3(V)-40.08)/78.25)+1)*EXP((TEMP-T0)/-155.8*EXP((TEMP-T0)/-326.5))/10)* + W/(ABS(W)+2.078*(TANH((V3(V)-40.08)/78.25)+1)*EXP((TEMP-T0)/-155.8*EXP((TEMP-T0)/-326.5)))} .FUNC C1(U,V,W) {(1028*V+1971*(1-W/0.8431)**-0.4397)*(0.2108*TANH((U+7.666)/3.268)+0.7892)} V1 1 11 0 E1 11 12 VALUE={R1(MIN(MAX(I(V1),-5k),5k))} V2 2 21 0 E2 21 22 VALUE={R2(I(V2))} L1 3 32 4.5n R2 3 32 10 E3 41 0 VALUE={V1(MIN(MAX(V(22,32),0),22),MIN(MAX(V(42),0),1.2k))} E4 42 0 VALUE={V2(MIN(MAX(V(41),0),20))} G1 12 32 VALUE={I1(MIN(MAX(V(42),0),1.2k),V(12,32))} R3 12 32 1T V3 22 23 0 C1 23 12 1p G2 22 12 VALUE={I(V3)*C1(V(22,12),MIN(MAX(V(22,12),0),0.593),MIN(V(22,12),0))} C2 22 32 2.183n R4 22 3 1G ********* ********* ********* ********* ********* ********* ********* ********* ********* ********* ********* .FUNC R11(I) {79.18m*ASINH(I/0.5202)*EXP((TEMP-T0)/217.9)+22.43m*I*EXP((TEMP-T0)/599.6)} .FUNC I11(V) {30.71n*(EXP(V/0.09265/EXP((TEMP-T0)/-302.0))-1)*EXP((TEMP-T0)/-65.69*EXP((TEMP-T0)/-842.5))- + 1u*TANH(-V/0.1)*EXP((TEMP-T0)/180.3)-231.9E-21*(EXP(-V/25)-1)*EXP((TEMP-T0)/-200)} .FUNC C11(V,W) {1650*(V-0.8682)+1966*(1-W/1.736)**-0.5112} V11 32 51 0 E11 51 52 VALUE={R11(MIN(MAX(I(V11),-400k),600k))} V12 52 53 0 C11 53 1 1p G11 52 1 VALUE={I11(MIN(MAX(V(52,1),-2k),5))+I(V12)*C11(MAX(V(52,1),0.8682),MIN(V(52,1),0.8682))} R11 52 1 1T .ENDS SCT3022AL